M_PMOS
M_NMOS
ModelcardMOS
M_NMOS2
M_PMOS2
ModelcardMOS2
Q_NPNBJT
Q_PNPBJT
ModelcardBJT
J_PJFJFET
J_NJFJFET
ModelcardJFET
D_DIODE
ModelcardDIODE
R_Resistor
ModelcardRESISTOR
C_Capacitor
ModelcardCAPACITOR
Semiconductor devices and model cards
This package contains both the semiconductor devices models of SPICE3, which are available, and their modelcards. The user should apply the models of this package.
All models of this package extend models of the package Repository, which contains the functions, parameters and data which are necessary to model the behaviour of the semiconductor devices.The modelcard records contain the SPICE3 technology parameters, which can be adjusted for more than one MOS simultaneously.
Extends from Modelica.Icons.Package (Icon for standard packages).
| Name | Description |
|---|---|
| M_PMOS
|
PMOS MOSFET device |
| M_NMOS
|
NMOS MOSFET device |
| ModelcardMOS
|
Record for the specification of modelcard parameters |
| M_NMOS2
|
NMOS MOSFET device |
| M_PMOS2
|
PMOS MOSFET device |
| ModelcardMOS2
|
Record for the specification of modelcard parameters |
| Q_NPNBJT
|
Bipolar junction transistor |
| Q_PNPBJT
|
Bipolar junction transistor |
| ModelcardBJT
|
Record for the specification of modelcard parameters |
| J_PJFJFET
|
P-channel Junction Field-Effect Transistor model (JFET) |
| J_NJFJFET
|
N-channel Junction Field-Effect Transistor model (JFET) |
| ModelcardJFET
|
Record for the specification of modelcard parameters for JFET |
| D_DIODE
|
Diode model |
| ModelcardDIODE
|
Record for the specification of modelcard parameters |
| R_Resistor
|
Semiconductor resistor from SPICE3 |
| ModelcardRESISTOR
|
Record for the specification of modelcard parameters |
| C_Capacitor
|
Semiconductor capacitor |
| ModelcardCAPACITOR
|
Record for the specification of modelcard parameters for Semiconductor Capacitor |
Modelica.Electrical.Spice3.Semiconductors.M_PMOSPMOS MOSFET device
The model M_PMOS is a P channel MOSFET transistor with fixed level 1: Shichman-Hodges model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.MOS (Metal-Oxide Semiconductor Field-Effect Transistor).
| Name | Description |
|---|---|
| mtype | MOSFET type: 0 - N channel, 1 - P channel |
| L | Length [m] |
| W | Width [m] |
| AD | Area of the drain diffusion [m2] |
| AS | Area of the source diffusion [m2] |
| PD | Perimeter of the drain junction [m] |
| PS | Perimeter of the source junction [m] |
| NRD | Number of squares of the drain diffusions |
| NRS | Number of squares of the source diffusions |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC | Initial condition values, not implemented yet [V] |
| TEMP | Operating temperature of the device [degC] |
| modelcard | MOSFET modelcard |
| C | General constants of SPICE simulator |
| Name | Description |
|---|---|
| G | gate node |
| D | drain node |
| S | source node |
| B | bulk node |
Modelica.Electrical.Spice3.Semiconductors.M_NMOSNMOS MOSFET device
The model M_NMOS is a N channel MOSFET transistor with fixed level 1: Shichman-Hodges model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.MOS (Metal-Oxide Semiconductor Field-Effect Transistor).
| Name | Description |
|---|---|
| mtype | MOSFET type: 0 - N channel, 1 - P channel |
| L | Length [m] |
| W | Width [m] |
| AD | Area of the drain diffusion [m2] |
| AS | Area of the source diffusion [m2] |
| PD | Perimeter of the drain junction [m] |
| PS | Perimeter of the source junction [m] |
| NRD | Number of squares of the drain diffusions |
| NRS | Number of squares of the source diffusions |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC | Initial condition values, not implemented yet [V] |
| TEMP | Operating temperature of the device [degC] |
| modelcard | MOSFET modelcard |
| C | General constants of SPICE simulator |
| Name | Description |
|---|---|
| G | gate node |
| D | drain node |
| S | source node |
| B | bulk node |
Modelica.Electrical.Spice3.Semiconductors.ModelcardMOSRecord for the specification of modelcard parameters
Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardMOS (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| VTO | Zero-bias threshold voltage, default 0 [V] |
| KP | Transconductance parameter, default 2e-5 [A/V2] |
| GAMMA | Bulk threshold parameter, default 0 |
| PHI | Surface potential, default 0.6 [V] |
| LAMBDA | Channel-length modulation, default 0 [1/V] |
| RD | Drain ohmic resistance, default 0 [Ohm] |
| RS | Source ohmic resistance, default 0 [Ohm] |
| CBD | Zero-bias B-D junction capacitance, default 0 [F] |
| CBS | Zero-bias B-S junction capacitance, default 0 [F] |
| IS | Bulk junction saturation current [A] |
| PB | Bulk junction potential [V] |
| CGSO | Gate-source overlap capacitance per meter channel width [F/m] |
| CGDO | Gate-drain overlap capacitance per meter channel width [F/m] |
| CGBO | Gate-bulk overlap capacitance per meter channel width [F/m] |
| RSH | Drain and source diffusion sheet resistance [Ohm] |
| CJ | Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2] |
| MJ | Bulk junction bottom grading coefficient |
| CJSW | Zero-bias junction sidewall cap. per meter of junction perimeter [F/m] |
| MJSW | Bulk junction sidewall grading coefficient |
| JS | Bulk junction saturation current per sq-meter of junction area [A/m2] |
| TOX | Oxide thickness, default 1e-7 [m] |
| NSUB | Substrate doping, default 0 |
| NSS | Surface state density [1/cm2] |
| TPG | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
| LD | Lateral diffusion [m] |
| UO | Surface mobility [cm2/(V.s)] |
| KF | Flicker noise coefficient |
| AF | Flicker noise exponent |
| FC | Coefficient for forward-bias depletion capacitance formula |
| TNOM | Parameter measurement temperature, default 27 [degC] |
Modelica.Electrical.Spice3.Semiconductors.M_NMOS2NMOS MOSFET device
The model M_NMOS is a N channel MOSFET transistor with fixed level 2:
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.MOS2 (Metal-Oxide Semiconductor Field-Effect Transistor).
| Name | Description |
|---|---|
| mtype | MOSFET type: 0 - N channel, 1 - P channel |
| L | Length [m] |
| W | Width [m] |
| AD | Area of the drain diffusion [m2] |
| AS | Area of the source diffusion [m2] |
| PD | Perimeter of the drain junction [m] |
| PS | Perimeter of the source junction [m] |
| NRD | Number of squares of the drain diffusions |
| NRS | Number of squares of the source diffusions |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC_VDS | Initial condition value (VDS, not implemented yet) [V] |
| IC_VGS | Initial condition value (VGS, not implemented yet) [V] |
| IC_VBS | Initial condition value (VBS, not implemented yet) [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| TEMP | Operating temperature of the device [degC] |
| modelcard | MOSFET modelcard |
| IC | Initial condition values, not implemented yet [V] |
| C | General constants of SPICE simulator |
| Name | Description |
|---|---|
| G | gate node |
| D | drain node |
| S | source node |
| B | bulk node |
Modelica.Electrical.Spice3.Semiconductors.M_PMOS2PMOS MOSFET device
The model M_PMOS is a P channel MOSFET transistor with fixed level 2:
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.MOS2 (Metal-Oxide Semiconductor Field-Effect Transistor).
| Name | Description |
|---|---|
| mtype | MOSFET type: 0 - N channel, 1 - P channel |
| L | Length [m] |
| W | Width [m] |
| AD | Area of the drain diffusion [m2] |
| AS | Area of the source diffusion [m2] |
| PD | Perimeter of the drain junction [m] |
| PS | Perimeter of the source junction [m] |
| NRD | Number of squares of the drain diffusions |
| NRS | Number of squares of the source diffusions |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC_VDS | Initial condition value (VDS, not implemented yet) [V] |
| IC_VGS | Initial condition value (VGS, not implemented yet) [V] |
| IC_VBS | Initial condition value (VBS, not implemented yet) [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| TEMP | Operating temperature of the device [degC] |
| modelcard | MOSFET modelcard |
| IC | Initial condition values, not implemented yet [V] |
| C | General constants of SPICE simulator |
| Name | Description |
|---|---|
| G | gate node |
| D | drain node |
| S | source node |
| B | bulk node |
Modelica.Electrical.Spice3.Semiconductors.ModelcardMOS2Record for the specification of modelcard parameters
Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardMOS2 (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| VTO | Zero-bias threshold voltage, default 0 [V] |
| KP | Transconductance parameter, default 2e-5 [A/V2] |
| GAMMA | Bulk threshold parameter, default 0 |
| PHI | Surface potential, default 0.6 [V] |
| LAMBDA | Channel-length modulation, default 0 [1/V] |
| RD | Drain ohmic resistance, default 0 [Ohm] |
| RS | Source ohmic resistance, default 0 [Ohm] |
| CBD | Zero-bias B-D junction capacitance, default 0 [F] |
| CBS | Zero-bias B-S junction capacitance, default 0 [F] |
| IS | Bulk junction saturation current [A] |
| PB | Bulk junction potential [V] |
| CGSO | Gate-source overlap capacitance per meter channel width [F/m] |
| CGDO | Gate-drain overlap capacitance per meter channel width [F/m] |
| CGBO | Gate-bulk overlap capacitance per meter channel width [F/m] |
| RSH | Drain and source diffusion sheet resistance [Ohm] |
| CJ | Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2] |
| MJ | Bulk junction bottom grading coefficient |
| CJSW | Zero-bias junction sidewall cap. per meter of junction perimeter [F/m] |
| MJSW | Bulk junction sidewall grading coefficient |
| JS | Bulk junction saturation current per sq-meter of junction area [A/m2] |
| TOX | Oxide thickness, default 1e-7 [m] |
| NSUB | Substrate doping, default 0 |
| NSS | Surface state density [1/cm2] |
| TPG | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
| LD | Lateral diffusion [m] |
| UO | Surface mobility [cm2/(V.s)] |
| KF | Flicker noise coefficient |
| AF | Flicker noise exponent |
| FC | Coefficient for forward-bias depletion capacitance formula |
| TNOM | Parameter measurement temperature, default 27 [degC] |
| NFS | Fast surface state density [1/cm2] |
| XJ | Metallurgical junction depth [m] |
| UCRIT | Critical field for mobility degradation (MOS2 only) [V/cm] |
| UEXP | Critical field exponent in mobility degradation (MOS2 only) |
| VMAX | Maximum drift velocity of carries [m/s] |
| NEFF | Total channel charge (fixed and mobile) coefficient (MOS2 only) |
| DELTA | Width effect on threshold voltage |
Modelica.Electrical.Spice3.Semiconductors.Q_NPNBJTBipolar junction transistor
The model Q_NPNBJT is a NPN bipolar junction transistor model: Modified Gummel-Poon.
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.BJT2 (Bipolar junction transistor).
| Name | Description |
|---|---|
| useSubstrateNode | =true, if SubstrateNode is enabled |
| TBJT | Type of transistor (NPN=1, PNP=-1) |
| AREA | Area factor |
| OFF | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
| IC_VBE | Initial condition value (VBC, not implemented yet) [V] |
| IC_VCE | Initial condition value (VBE, not implemented yet) [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| TEMP | Operating temperature of the device [degC] |
| SENS_AREA | Flag to request sensitivity WRT area, not implemented yet |
| modelcard | BJT modelcard |
| Name | Description |
|---|---|
| B | Base node |
| C | Collector node |
| E | Emitter node |
| S |
Modelica.Electrical.Spice3.Semiconductors.Q_PNPBJTBipolar junction transistor
The model Q_PNPBJT is a PNP bipolar junction transistor model: Modified Gummel-Poon.
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.BJT2 (Bipolar junction transistor).
| Name | Description |
|---|---|
| useSubstrateNode | =true, if SubstrateNode is enabled |
| TBJT | Type of transistor (NPN=1, PNP=-1) |
| AREA | Area factor |
| OFF | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
| IC_VBE | Initial condition value (VBC, not implemented yet) [V] |
| IC_VCE | Initial condition value (VBE, not implemented yet) [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| TEMP | Operating temperature of the device [degC] |
| SENS_AREA | Flag to request sensitivity WRT area, not implemented yet |
| modelcard | BJT modelcard |
| Name | Description |
|---|---|
| B | Base node |
| C | Collector node |
| E | Emitter node |
| S |
Modelica.Electrical.Spice3.Semiconductors.ModelcardBJTRecord for the specification of modelcard parameters
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Technology parameters of the modified Gummel-Poon bipolar junction transistor model
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardBJT2 (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| TNOM | Parameter measurement temperature [degC] |
| IS | Transport saturation current [A] |
| BF | Ideal maximum forward beta F |
| NF | Forward current emission coefficientF |
| NE | B-E leakage emission coefficient |
| ISE | B-E leakage saturation current, default = 0 [A] |
| ISC | B-C leakage saturation current, default = 0 [A] |
| BR | Ideal maximum reverse beta |
| NR | Reverse current emission coefficient |
| NC | B-C leakage emission coefficient |
| VAF | Forward Early voltage [V] |
| IKF | Forward beta roll-off corner current [A] |
| VAR | Reverse Early voltage [V] |
| IKR | Reverse beta roll-off corner current [A] |
| RE | Emitter resistance [Ohm] |
| RC | Collector resistance [Ohm] |
| IRB | Current for base resistance = (rb+rbm)/2 [A] |
| RB | Zero bias base resistance [Ohm] |
| RBM | Minimum base resistance, default = 0.0 [Ohm] |
| CJE | Zero bias B-E depletion capacitance [F] |
| VJE | B-E built in potential [V] |
| MJE | B-E junction exponential factor |
| TF | Ideal forward transit time [s] |
| XTF | Coefficient for bias dependence of TF |
| ITF | High current dependence of TF, [A] |
| VTF | Voltage giving VBC dependence of TF [V] |
| PTF | Excess phase at freq=1/(TF*2*Pi) Hz [Hz] |
| CJC | Zero bias B-C depletion capacitance [F] |
| VJC | B-C built in potential [V] |
| MJC | B-C junction grading coefficient |
| XCJC | Fraction of B-C cap to internal base |
| TR | Ideal reverse transit time [s] |
| CJS | Zero bias C-S capacitance [F] |
| VJS | Substrate junction built-in potential [V] |
| MJS | Substrate junction grading coefficient |
| XTB | Forward and reverse beta temperature exponent |
| EG | Energy gap for IS temperature effect on IS [eV] |
| XTI | Temperature exponent for IS |
| KF | Flicker Noise Coefficient |
| AF | Flicker Noise Exponent |
| FC | Forward bias junction fit parameter |
Modelica.Electrical.Spice3.Semiconductors.J_PJFJFETP-channel Junction Field-Effect Transistor model (JFET)
J_PJFJFET is a P-channel junction field-effect transistor.
The junction field-effect transistor is derived from the FET model of Shichman and Hodges.
The models from the package Semiconductors accesses to the package Internal where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.JFET (Junction Field-Effect Transistor).
| Name | Description |
|---|---|
| mtype | JFET type: 0 - N channel, 1 - P channel |
| AREA | Number of parallel connected identical elements |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC_VDS | Initial condition value (VDS, not implemented yet) [V] |
| IC_VGS | Initial condition value (VGS, not implemented yet) [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| TEMP | Operating temperature of the device [degC] |
| modelcard | JFET modelcard |
| Name | Description |
|---|---|
| G | gate node |
| D | drain node |
| S | source node |
Modelica.Electrical.Spice3.Semiconductors.J_NJFJFETN-channel Junction Field-Effect Transistor model (JFET)
J_NJFJFET is a N-channel junction field-effect transistor.
The junction field-effect transistor is derived from the FET model of Shichman and Hodges.
The models from the package Semiconductors accesses to the package Internal where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.JFET (Junction Field-Effect Transistor).
| Name | Description |
|---|---|
| mtype | JFET type: 0 - N channel, 1 - P channel |
| AREA | Number of parallel connected identical elements |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC_VDS | Initial condition value (VDS, not implemented yet) [V] |
| IC_VGS | Initial condition value (VGS, not implemented yet) [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| TEMP | Operating temperature of the device [degC] |
| modelcard | JFET modelcard |
| Name | Description |
|---|---|
| G | gate node |
| D | drain node |
| S | source node |
Modelica.Electrical.Spice3.Semiconductors.ModelcardJFETRecord for the specification of modelcard parameters for JFET
Technology parameters of the junction field-effect transistor model.
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardJFET (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| CGS | Zero-bias G-S junction capacitance, default 0 [F] |
| CGD | Zero-bias G-D junction capacitance, default 0 [F] |
| IS | Saturation current of pn junctions [A] |
| FC | Coefficient for forward-bias depletion capacitance formula |
| RD | Drain ohmic resistance, default 0 [Ohm] |
| RS | Source ohmic resistance, default 0 [Ohm] |
| TNOM | Parameter measurement temperature [degC] |
| VTO | Zero-bias threshold voltage, default -2 [V] |
| B | Dotierungsverlauf parameter, default 1 [1/V] |
| BETA | Output admittance parameter, default 1e-4 |
| LAMBDA | Channel-length modulation, default 0 [1/V] |
| PB | Junction potential of pn junctions [V] |
| AF | Flicker noise exponent |
| KF | Flicker noise coefficient |
Modelica.Electrical.Spice3.Semiconductors.D_DIODEDiode model
The model D_DIODE is a Junction diode model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.DIODE (Diode model).
| Name | Description |
|---|---|
| AREA | Area factor |
| OFF | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
| IC | Initial condition value (VD, not implemented yet [V] |
| TEMP | Operating temperature of the device [degC] |
| SENS_AREA | Flag to request sensitivity WRT area, not implemented yet |
| modelcarddiode | DIODE modelcard |
| C | General constants of SPICE simulator |
| Name | Description |
|---|---|
| p | Positive pin Positive pin (potential p.v > n.v for positive voltage drop v) |
| n | Negative pin |
Modelica.Electrical.Spice3.Semiconductors.ModelcardDIODERecord for the specification of modelcard parameters
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Technology parameters of the junction diode model
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardDIODE (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| IS | Saturation Current [A] |
| RS | Ohmic resistance [Ohm] |
| N | Emission coefficient |
| TT | Transit time [s] |
| CJO | Junction capacitance [F] |
| VJ | Junction Potential [V] |
| M | Grading coefficient |
| EG | Activation Energy [eV] |
| XTI | Saturation current temperature exponent |
| FC | Forward bias junction fit parameter |
| BV | Reverse breakdown voltage, default infinity [V] |
| IBV | Current at reverse breakdown voltage [A] |
| TNOM | Parameter measurement temperature [degC] |
| KF | Flicker noise coefficient |
| AF | Flicker noise exponent |
| G | Ohmic conductance [S] |
Modelica.Electrical.Spice3.Semiconductors.R_ResistorSemiconductor resistor from SPICE3
The model R_Resistor is a Semiconductor resistor model.
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.R_SEMI (Semiconductor resistor).
| Name | Description |
|---|---|
| R | Resistance, if specified, geometrical information is overwritten [Ohm] |
| TEMP | Temperature of resistor [degC] |
| L | Length of the resistor [m] |
| W | Width of the resistor, default DEFW (modelcard) [m] |
| SENS_AREA | Parameter for sensitivity analyses, not implemented yet |
| modelcard | Resistor modelcard |
| C | General constants of SPICE simulator |
| Name | Description |
|---|---|
| p | Positive pin (potential p.v > n.v for positive voltage drop v) |
| n | Negative pin |
Modelica.Electrical.Spice3.Semiconductors.ModelcardRESISTORRecord for the specification of modelcard parameters
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Technology parameters of the semiconductor resistor model
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardR (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| TC1 | First order temperature coefficient [Ohm/degC] |
| TC2 | In Ohm/(deg C*deg C), Second2 order temperature coefficient [Ohm/degC2] |
| RSH | Sheet resistance [Ohm] |
| TNOM | Parameter measurement temperature, default 27 [degC] |
| DEFW | Default device width [m] |
| NARROW | Narrowing of resistor due to side etching [m] |
Modelica.Electrical.Spice3.Semiconductors.C_CapacitorSemiconductor capacitor
C_Capacitor is a Semiconductor Capacitor model.
This capacitor model allows the calculation of the actual capacitance value from strictly geometric information and the specification of the process.
The models from the package Semiconductors accesses to the package Repository where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.C_SEMI (Semiconductor capacitor).
| Name | Description |
|---|---|
| C | Capacitance, if specified, geometrical information is overwritten [F] |
| TEMP | Temperature of capacitor [degC] |
| L | Length of the capacitor [m] |
| W | Width of the capacitor, default DEFW (modelcard) [m] |
| SENS_AREA | Parameter for sensitivity analyses, not implemented yet |
| IC | Initial value [V] |
| UIC | Use initial conditions: true, if initial condition is used |
| modelcard | Capacitor modelcard |
| Name | Description |
|---|---|
| p | Positive pin (potential p.v > n.v for positive voltage drop v) |
| n | Negative pin |
Modelica.Electrical.Spice3.Semiconductors.ModelcardCAPACITORRecord for the specification of modelcard parameters for Semiconductor Capacitor
Technology parameters of the semiconductor capacitor model.
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardC (Record with technological parameters (.model)).
| Name | Description |
|---|---|
| CJ | Junction bottom capacitance F/meters2 [F/m2] |
| CJSW | Junction sidewall capacitance F/meters [F/m] |
| DEFW | Default device width [m] |
| NARROW | Narrowing due to side etching [m] |